Scope of the Conference

Infos 2001 will continue the series of high-level conferences in Europe started in 1979. The conference will present the current status in dielectrics, semiconductors/insulator interfaces, and the physics and technology of MOS devices. The forum is intended to bring together scientists and engineers oriented to materials, devices and applications. Papers are solicited in the areas of physics, technology, characterization, and modeling of dielectrics, interfaces, devices and applications. Special emphasis will be given to ultrathin oxides on silicon, and alternative dielectrics. Topics include device reliability (radiation, hot carriers, tunneling, etc), atomic scale processing, characterization and modeling, scaling issues, novel material and processing technologies. The semiconductors considered are silicon, silicon carbide, silicon on insulators, SiGe, and III-V compounds.