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Dipartimento di Ingegneria Elettrica, Gestionale e Meccanica
Site: via delle Scienze,
208 - 33100 Udine - Italy
Administrative Secretary's Office: +39 0432 558251 (fax)
Session Contributions
Detailed
Conference Program
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TIME
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| 09.00
- 09.20 a.m. |
Conference
Opening |
GENERAL
CONFERENCE
Session
1.1: Oxide Breakdown
Chairpersons: Michael Uren, Robin Degraeve
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| 09.20
- 09.40 a.m. |
S.
Takagi
Carrier Trasport Properties of Thin Gate Oxides
after Soft and Hard Breakdown |
| 09.40
- 10.00 a.m. |
| 10.00
- 10.20 a.m. |
B.E.
Weir, M. A. Alam, P. J. Silverman, Soft Breakdown
at All Positions Along the N-MOSFET |
| 10.20
- 10.40 a.m. |
E.
Wu, J. Sun‚, W. Lai, E. Nowak, J. McKenna, A. Vayshenker, D. Harmon,
Interplay of Voltage |
| 10.40
- 11.10 a.m. |
Coffee
Break |
| 11.10
- 11.30 a.m. |
S.
Lombardo
Intrinsic Dielectric Breakdown of Ultra-thin
Gate Oxides |
| 11.30
- 11.50 a.m. |
| 11.50
- 12.10 a.m. |
F.
Crupi, C. Ciofi, G. Iannacone, B. Neri, S. Lombardo, Current
noise in a quantum point contact at the oxide hard-breakdown
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| 12.10
- 12.30 a.m. |
A.
Cester, L. Bandiera, A. Paccagnella, G. Ghidini, I. Bloom, Analysis
and Modelling of the Soft Breakdown Current fluctuations |
| 12.30
- 14.00 a.m. |
Lunch
Time |
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GENERAL
CONFERENCE
Session 1.2: Thin Oxide
Modeling
Chairpersons: Pierre Fazan, Fred Koch |
| 14.00
- 14.20 p.m. |
A.
Ghetti G. Campardo, R. Micheloni
Characterization and Modelling of the Tunneling
Current in Si/SiO2/Si Structures |
| 14.20
- 14.40 p.m. |
| 14.40
- 15.00 p.m. |
M.
Staedele, B. Fischer, B. Tuttle, K. Hess, Direct
and defect-assisted tunneling |
| 15.00
- 15.20 p.m. |
M.
Alam, B. Weir, J. Bude, B. Silverman, A. Ghetti
A Computational Model for Oxide Breakdown: Theory
and Experiments |
| 15.20
- 15.40 p.m. |
| 15.40
- 16.00 p.m. |
J.
Suñé, E. Wu, Modeling breakdown
and breakdown statistics of ultrathin SiO2 gate oxides |
| 16.00
- 16.20 p.m. |
B.
Kaczer, R. Degreave, A. de Keersgieter, M. Rasras, G. Groeseneken,
Explanation of nMOSFET substrate current after
hard gate oxide breakdown |
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WORKSHOP
ON MEMORIES
Session
M.1: Memory architectures and reliability
Chairpersons: Alessandro Paccagnella, Frans Widdershoven
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| 14.00
- 14.20 p.m. |
G.
Campardo, R. Micheloni
Architecture of Non Volatile Memory with Multi-bit
cells |
| 14.20
- 14.40 p.m. |
| 14.40
- 15.00 p.m. |
A.
Scarpa, G. Tao, j. Dijkstra, F. J. Kuper, Tail
bit implications in advanced 2T flash memory device reliability |
| 15.00
- 15.20 p.m. |
D.
Ielmini, A. S. Spinelli, A. L. Lacaita, A. Modelli, A
New Two-Trap Tunneling Model for the Anomalous SILC in Flash Memories
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| 15.20
- 15.40 p.m. |
A.
Chimenton, P. Pellati, P. Olivo, Threshold voltage
spread in Flash Memories under a constant DQ erasing scheme |
| 15.40
- 16.00 p.m. |
D-S.
Kuo, C. Wan, S. Chu, MS Liang, CS Tsai, HJ Tao, YC Huang, JP Wu, YT
Chen, JD Chih, CH Hsieh, HC Sung, JK Yeh, CJ Lin, SH lin, CT Hsieh,
WT Chu, HP Chen, CY Hsu, DS Shyu, SP Peng, TJ Fong, KY Lee, SC Wong
A
Flash-based SOC Technology Using Split-gate Cell |
| 16.00
- 16.20 p.m. |
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WINE
AND CHEESE RECEPTION |
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Session
P.1: Poster Session
Chairpersons: Valery V. Afanas’ev, Hisham Massoud,
Max Schultz |
| 17.30
- 18.30 p.m. |
W.D.
Zhang, J. F. Zhang, M. J. Uren, J. Groeseneken, R. Degraeve, M. Lalor,
D. Burton, Dependence of energy distributions
of interface states on stress conditions
A. Bongiorno, A. Pasquarello, Oxygen diffusion in amorphous SiO2:
A first-principle investigation
T. Gebel, J. von Borany, H. J. Thees, M. Wittmaack, K. H. Stegemann,
W. Skorupa, Non-volatile memories based on Si+
-implanted Gate oxides
G. Borsoni, V. Le Roux, R. Laftitte, M. L. Korwin-Pawlowski, C. Vannuffel,
F. Bertin, C. Vergnaud, A. Chabli, C. Wyon, Dependence
of Ultra Thin SiO2 Layers Formation by Ultra Slow Single and Multicharged
Ions on Process Conditions
J.R. Schwank, M. R. Shaneyfelt, T. L. Meisenheimer, B. L. Draper,
A Silicon-on-Insulator Non-Volatile Field-Effect
Transistor Memory
D.-O. Lee, P. Roman, C. T. Wu, B. Mahoney, M. Horn, P. Mumbauer, M.
Brubaker, R. Grant, J. Ruzyllo, Studies of Liquid
Misted Deposited High-k Dielectrics for MOS Gates
G. Lloyd, N. Sedghi, M.Raja, I. Sellers, S. Higgins, R. Di Lucrezia,
B. Eccleston, The Properties of MOS Stuctures
using Conjugated Polymers as the Semiconductor
M.I. Vexler, N. Asli, A. F. Shulekin, B. Meinerzhagen, P. Seegebrecht,
Compact Quantum Model for a Silicon MOS Tunnel
Diode
A. Bravaix, D. Goguenheim, N. Revil, E. Vincent, Hot-Carrier
Reliability study of Second and First Impact Ionization degradation
in 0.15 micron Channel-Length N-MOSFET's
S. Huth, O. Breitenstein, A. Huber, D. Dantz, U. Lambert, Localization
and detailed investigation of gate oxide integrity defects in silicon
MOS structures
F. Lime, R. Clerc, G. Ghibaudo, G. Pananakakis, G. Guégan,
Impact of Gate Tunneling Leakage on the Operation of nMOS Transistors
with Ultra Thin Gate Oxides
H.N. Al-Shareef, G. Bersuker, C. Lim, G. A. Brown, R. W. Murto,
H. R. Huff, Nitridation of Gate Dielectrics
By Remote Plasma (RPN) and Decoupled Plasma (DPN) Nitridation
V.N. Dobrovolsky, L. V. Ishchuk, G. K. Ninidze,
Reversed Electron-Hole Pair Transport in SOI Structure
F. Rahmoune, D. Bauza, Si-SiO2 interface
trap capture properties
P.J. Macfarlane, R. E. Stahlbush, Trapping
Dependent H+ Motion in SIMOX Buried Oxides |
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THURSDAY,
June 21, 2001
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GENERAL
CONFERENCE
Session 2.1: Oxide
and Interface Characterization Techniques
Chairperson: Henryk Przewlocki |
| 09.00
- 09.20 a.m. |
R. Ludeke,
E. Cartier, Imaging of oxide and interface charge
in SiO2 / Si |
| 09.20
- 09.40 a.m. |
M. Porti,
M. Nafrìa, X. Aymerich, B. Ebesberger, A. Olbrich, Propagation
of the SiO2 Breakdown event on MOS stuctures observed with Conductive
Atomic Force Microscopy |
| 09.40
- 10.00 a.m. |
F. Widdershoven,
Extraction of gate oxide thickness from C-V measurements |
| 10.00
- 10.20 a.m. |
C. Leroux,
G. Ghibaudo, G. Reimbold, R. Clerc, Extraction
of oxide thickness in the nanometer range using C(V) characteristics
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| 10.20
- 10.50 a.m. |
Coffee
Break and poster session |
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Session
2.2: New Memory Devices
Chairperson: Alberto Modelli |
| 10.50
- 11.10 a.m. |
I.
Bloom, P. Pavan, B. Eitan
NROM - a New Non Volatile Memory Technology:
from Device to Products |
| 11.10
- 11.30 a.m. |
| 11.30
- 11.50 a.m. |
R. van
Schaijk, N. Wils, M. Slotboom, F. Widdershoven, Compact
poly-CMP embedded flash memory |
| 11.50
- 12.10 a.m. |
D. Esseni,
L. Selmi, BipFLASH: A Novel Non Volatile Memory
Cell Concept for High Speed - Low Power Applications |
| 12.10
- 12.30 a.m. |
H.
Takasu
Ferroelectric Memories and Their Applications
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| 12.30
- 12.50 a.m. |
| 12.50
- 14.20 a.m. |
Lunch
Time
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HIGH
K DIELECTRICS WORKSHOP
Session K.1: High-k
Material Properties
Chairpersons: Martin Green, Hiroshi Iwai |
| 09.00
- 09.20 a.m. |
M.
Heyns, H. Bender, R. Carter, M. Caymax, T. Conard, S. De Gendt, R.
Degraeve, H. De Witte, G. Groeseneken, S. Haukka, K. Hanson, M. Houssa,
S. Kubicek, G. W. Maes, M. Naili, H. Nohira, W. Tsai, M. Tuominen,
W. Vandervorst, R. Wilhelm, E. Yang, C. Zhao
High-k dielectric materials prepared by Atomic
Layer CVD |
| 09.20
- 09.40 a.m. |
| 09.40
- 10.00 a.m. |
G. Lucovsky,
Electron Structure on Transition Metal Atoms in Silicate Alloys: Contribution
to Bulk Interface Gate Dielectric Properties |
| 10.00
- 10.20 a.m. |
V.V.
Afanas'ev, M. Houssa, A. Stesmans, M.M. Heyns, Energy
Barriers between (100) Si and Al2O3 and ZrO2-Based Dielectric Stacks:
Internal Electron Photo Emission Measurements |
| 10.20
- 10.50 a.m. |
Coffee
Break and poster session |
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Session
K.2: Process Integration and Reliability
Chairpersons: Martin Green, Hiroshi Iwai |
| 10.50
- 11.10 a.m. |
E.P.
Gusev, E. Cartier, D.A. Buchanan, M. Gribelyuk, M. Copel, A. Callegari,
H.Okorn-Schmidt, C. D'Enic, P. Kozlowski
Ultrathin High-K Metal Oxides on Silicon: Processing
Characterisation and Integration Issues |
| 11.10
- 11.30 a.m. |
| 11.30
- 11.50 a.m. |
L.
Manchanda, M. D. Morris, M. L. Green, R. B. van Dover, F. Klemens,
T. W. Sorsch, P.J. Silverman, G. WilK, B. Busch, S. Arvamudhan
Multi-component High Key Gate Dielectrics for
the Silicon Industry |
| 11.50
- 12.10 a.m. |
| 12.10
- 12.30 a.m. |
S.A.
Campbell, T.Z. Ma, R. Smith, W. L. Gladfelter, F. Chen, High
Mobility HfO2 N- and P- Channel Transistors |
| 12.30
- 12.50 a.m. |
M. Houssa,
V.V. Afanas'ev, A. Stesmans, M.M. Heyns, Defect
generation in ultra-thin SiO2 gate layers and SiO2/ZrO2 gate stacks
and the dispersive transport model |
| 12.50
- 14.20 a.m. |
Lunch
Time |
| 14.45
- 20.00 a.m. |
TOUR |
| 20.00
- 24.00 a.m. |
GALA
DINNER |
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FRIDAY, June 22, 2001
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GENERAL
CONFERENCE
Session 3.1: Technology
Chairpersons: Andre Stesmans |
| 09.00
- 09.20 a.m. |
B.J.
Mrstik, H.L. Huges, P. J. McMarr, Reduction
in DVfb During Hole Injection in Thermal Oxides that have been Ion
Implanted |
| 09.20
- 09.40 a.m. |
J. Diener,
D. Kovalev, F. Koch, Resonant Energy Transfer
at the Silicon-Silicon Oxide Interface and the Possibility of Nonthermal
Processing |
| 09.40
- 10.00 a.m. |
W. Eccleston,
Carrier generation and current flow at the interface
between polysilicon and an SiO2 gate dielectrics |
| 10.00
- 10.20 a.m. |
H.
Kageshima, M. Uematsu, K. Shiraishi
Theory of Si thermal oxide growth rate taking
into account interfacial Si emission effects |
| 10.20
- 10.40 a.m. |
| 10.40
- 11.10 a.m. |
Coffee
Break and poster session |
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Session
3.2: Alternative Dielectrics and Reliability
Chairpersons: Joan Ramon Morante |
| 11.10
- 11.30 a.m. |
S. Miyazaki,
M. Narasaki, M. Ogasawara, M. Hirose, Characterization
of Ultrathin Zirconium Oxide Films on Silicon Using Photoelectrons
Spectroscopy |
| 11.30
- 11.50 a.m. |
M.L.
Polignano, C. Carpanese, B. Crivelli, A. Giussani, R. Zonca, M. Bersani,
M. Sbetti, Interface properties of annealed
and nitrided HTO layers |
| 11.50
- 12.10 a.m. |
R.S.
Johnson, G.Lucowsky, J. G. Hong, Fixed Charge
and Interface Traps at Interfaces between Si (100) and Al2O3 and Ta2O5-Al2O3
alloys |
| 12.10
- 12.30 a.m. |
R.E.
Stahlbush, P. J. Macfarlane, Interface Traps
and Bulk Defects in SiC MOSFETs Studied by Light Emission |
| 12.30
- 12.50 a.m. |
T. Dittrich,
T. Bitzer, T. Rada, N. V. Richardson, V. Yu. Timoshenko, J. Rappich,
F. Koch, Defect transformation under growth
of submonolayer oxides on silicon surfaces at low temperatures |
| 12.50
- 14.20 a.m. |
Lunch
Time |
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SOI
WORKSHOP
Session S.1: Transport
properties in SOI devices
Chairpersons: Sorin Cristoloveanu |
| 09.00
- 09.20 a.m. |
M.
Mastrapasqua, D. Esseni, G.K. Celler, C. Fiegna, L. Selmi, E. Sangiorgi
Measurements of low field mobility in ultra-thin
SOI n- and p-MOSFETs |
| 09.20
- 09.40 a.m. |
| 09.40
- 10.00 a.m. |
J. Walczak,
B. Majkusiak, The Remote Roughness Mobility
resulting from the Ultrathin SiO2 Thichness Nonuniformity in the DG
SOI and Bulk MOS Transistors |
| 10.00
- 10.20 a.m. |
F. Gámiz,
J.B.Roldàn, J. A. Lòpez-Villanueva, F. Jiménez-Molinos, Electron
transport in ultrathin Silicon-On-Insulator structures |
| 10.20
- 10.40 a.m. |
A. Kumar,
Rakesh Lal, V. Ramgopal Rao, A Simple and Direct
Technique for Interface Characterisation of SOI - MOSFETs and its
Application in Sub 100nm JVD-MNSFETs |
| 10.40
- 11.10 a.m. |
Coffee
Break and poster session |
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Session
S.2: New SOI Device Concepts
Chairpersons: William Eccleston |
| 11.10
- 11.30 a.m. |
Y.
Ono, Y. Takahashi, H. Namatsu Single-Electron
and Quantum SOI Devices |
| 11.30
- 11.50 a.m. |
| 11.50
- 12.10 a.m. |
J. Pretet,
S. Cristoloveanu, N. Hefeyene, M. Matsui, Y. Moriyasu, Y. Kawakami,
Electrical evaluation of innovating processes
for SOS materials |
| 12.10
- 12.30 a.m. |
M. Bain,
B.M. Armstrong, H. Gamble, H. A. W. El Mubarek, P. Ashburn, A. C.
Lamb, S. Hall, SiGe HBTs on Bonded Wafer Substrates
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| 12.30
- 12.50 a.m. |
I. Lagnado,
P. de la Houssaye, T. F. Kuech, P. Moran, Integration
of Si and and SiGe with Al2O3 (sapphire) |
| 12.50
- 14.20 a.m. |
Lunch
Time |
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GENERAL
CONFERENCE
Session 3.3: Thin Oxide
Reliability
Chiarpersons: Jordi Sune, Gilles Reimbold |
| 14.20
- 14.40 p.m. |
D. Esseni,
J. D. Bude, L. Selmi, Experimental Evidence
of Low Voltage Anode Hole Injection in Thin Oxides |
| 14.40
- 15.00 p.m. |
K. Komiya,
Y. Omura, Spectroscopic Analysis of Stress-Induced
Defects in Thin Silicon Oxide Films |
| 15.00
- 15.20 p.m. |
J.F.
Zhang, C. Z. Zhao, G. Groeseneken, R. Degraeve, J. N. Ellis, C. D.
Beech, Relation between hole traps and non-
reactive hydrogen induced positive charges |
| 15.20
- 15.40 p.m. |
E.M.
Vogel, M. D. Edelstein, J. S. Suehle
Reliability of Ultrathin Silicon Dioxide Under
Substrate Hot-electron, Substrate Hot-hole, and Tunneling Stress |
| 15.40
- 16.00 p.m. |
| 16.00
- 16.20 p.m. |
V.V.
Afanas'ev, A. Stesmans, Positive Charging of
Thermal SiO2 Layers: Hole Trapping versus Proton Trapping |
| 16.20
- 16.40 p.m. |
W.D.
Zhang, J. F. Zhang, M. Lalor, B. Burton, G. Groeseneken, R. Degraeve,
On the mechanism of electrone trap generation
in gate oxides |
| 16.40
- 16.45 p.m. |
Conference
closing |
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SOI
WORKSHOP
Session S.3: Transient
Effects and Reliability of SOI Devices
Chairpersons: Olof Engstrom, James Stathis |
| 14.20
- 14.40 p.m. |
R.
Zingg
High-voltage, double-gate devices on SOI |
| 14.40
- 15.00 p.m. |
| 15.00
- 15.20 p.m. |
S. Okhonin,
M. Nagoga, J.-M. Sallese, P. Fazan, O. Faynot, J. Pontcharra, S. Cristoloveanu,
Transient effects in PD SOI NMOSFETs |
| 15.20
- 15.40 p.m. |
W.K.
Yeh, C. Huang, T. F. Chen, Sungmu. Hsu, J. Liu, F. T. Liou, Thermal
effect of 0.1 um Partialy Depleted SOI CMOSFET |
| 15.40
- 16.00 p.m. |
J. Pretet,
N. Subba, D. Ioannu, S. Cristoloveanu, W. Maszara, C. Raynaud, Channel-width
dependance of floating body effects in STI- and LOCOS- isolated MOSFETS
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| 16.00
- 16.20 p.m. |
A. Vandooren,
J. F. Conley, S. Cristoloveanu, L. M. Mojarradi, E. Kolowa, Degradation
Mechanisms in SOI n-channel LDMOSFETs |
| 16.20
- 16.40 p.m. |
A. Rivera,
A. van Veen, H. Schut, J. M. M. de Nijs, P. Balk, Deuterium
interactions with buried oxides |
| 16.40
- 16.45 p.m. |
Conference
closing |
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